Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

IXGK50N60A2U1

Banner
productimage

IXGK50N60A2U1

IGBT 600V 75A 400W TO264AA

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXGK50N60A2U1 is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This TO-264AA packaged device offers a continuous collector current of 75A and a pulsed collector current of 200A. With a maximum power dissipation of 400W and a low collector-emitter saturation voltage (Vce(on)) of 1.6V at 15V gate drive and 50A, it ensures efficient operation. The switching characteristics include a turn-on delay (Td(on)) of 20ns and a turn-off delay (Td(off)) of 410ns at 25°C, with a switching energy of 3.5mJ (off). Operating across a temperature range of -55°C to 150°C, this through-hole component is suitable for industrial motor drives, welding equipment, and uninterruptible power supplies (UPS).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.6V @ 15V, 50A
Supplier Device PackageTO-264 (IXGK)
IGBT Type-
Td (on/off) @ 25°C20ns/410ns
Switching Energy3.5mJ (off)
Test Condition480V, 50A, 5Ohm, 15V
Gate Charge140 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)200 A
Power - Max400 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IXA20I1200PZ-TUB

DISC IGBT XPT-GENX3 TO-263D2

product image
IXYK140N90C3

IGBT 900V 310A 1630W TO264

product image
IXLF19N250A

IGBT 2500V 32A 250W I4PAC