IXGK50N120C3H1
IGBT 1200V 95A 460W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGK50N120C3H1 is a high-performance GenX3™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT IGBT features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 95A, with a pulsed capability of 240A. The device exhibits a low on-state voltage of 4.2V at 15V gate-emitter voltage and 40A collector current, with a maximum power dissipation of 460W. Switching characteristics include a gate charge of 196 nC, turn-on delay of 31ns, and turn-off delay of 123ns at 25°C, with a reverse recovery time of 75ns. Packaged in a TO-264 through-hole configuration, this component is suitable for applications within the industrial and power control sectors, operating across a temperature range of -55°C to 150°C.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 75 ns |
| Vce(on) (Max) @ Vge, Ic | 4.2V @ 15V, 40A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 31ns/123ns |
| Switching Energy | 2mJ (on), 630µJ (off) |
| Test Condition | 600V, 40A, 2Ohm, 15V |
| Gate Charge | 196 nC |
| Current - Collector (Ic) (Max) | 95 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 460 W |
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