IXGK320N60B3
IGBT 600V 500A 1700W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGK320N60B3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. Featuring a 600V collector-emitter breakdown voltage and a continuous collector current capability of 500A (1200A pulsed), this device offers robust performance. The PT IGBT type, with its standard input, ensures efficient switching characteristics, evidenced by a gate charge of 585 nC and switching energies of 2.7mJ (on) and 3.5mJ (off) at a test condition of 480V, 100A, 1 Ohm, 15V. The on-state voltage (Vce(on)) is a maximum of 1.6V at 15V gate drive and 100A collector current. With a maximum power dissipation of 1700W and an operating temperature range of -55°C to 150°C, this through-hole component, housed in a TO-264 package, is suitable for industrial motor drives, power supplies, and electric vehicle applications.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 100A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 44ns/250ns |
| Switching Energy | 2.7mJ (on), 3.5mJ (off) |
| Test Condition | 480V, 100A, 1Ohm, 15V |
| Gate Charge | 585 nC |
| Current - Collector (Ic) (Max) | 500 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 1200 A |
| Power - Max | 1700 W |
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