IXGK320N60A3
IGBT 600V 320A 1000W TO264AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGK320N60A3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. Featuring a 600V collector-emitter breakdown voltage and a continuous collector current of 320A (700A pulsed), this device offers robust power handling capability up to 1000W. The PT IGBT type ensures efficient switching characteristics, with a typical on-state voltage of 1.25V at 15V gate-emitter voltage and 100A collector current. The gate charge is specified at 560 nC, facilitating straightforward gate drive design. Operating across a wide temperature range of -55°C to 150°C (TJ), the IXGK320N60A3 is housed in a TO-264AA package, suitable for through-hole mounting. This component is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.25V @ 15V, 100A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 560 nC |
| Current - Collector (Ic) (Max) | 320 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 700 A |
| Power - Max | 1000 W |
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