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IXGK28N140B3H1

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IXGK28N140B3H1

IGBT 1400V 60A 300W TO264

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS GenX3™ IXGK28N140B3H1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT IGBT features a maximum collector emitter voltage of 1400V and a continuous collector current rating of 60A, with a pulsed current capability of 150A. The device boasts a low on-state voltage of 3.6V at 15V gate-emitter voltage and 28A collector current. With a maximum power dissipation of 300W and a typical switching energy of 3.6mJ (on) and 3.9mJ (off) at 960V, 28A, and 5 Ohm, the IXGK28N140B3H1 offers efficient switching performance. Its standard input type and a gate charge of 88 nC contribute to its operational characteristics. Packaged in a TO-264-3 (IXGK) through-hole configuration, this component is suitable for operating temperatures ranging from -55°C to 150°C. The IXYS GenX3™ series IXGK28N140B3H1 is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.

Additional Information

Series: GenX3™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)350 ns
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 28A
Supplier Device PackageTO-264 (IXGK)
IGBT TypePT
Td (on/off) @ 25°C16ns/190ns
Switching Energy3.6mJ (on), 3.9mJ (off)
Test Condition960V, 28A, 5Ohm, 15V
Gate Charge88 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)1400 V
Current - Collector Pulsed (Icm)150 A
Power - Max300 W

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