IXGK120N60B
IGBT 600V 200A 660W TO264AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGK120N60B is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This PT IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 200A, with a pulsed current rating of 300A. It offers a maximum power dissipation of 660W and a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 120A collector current. Typical switching times are 60ns turn-on and 200ns turn-off, with switching energies of 2.4mJ (on) and 5.5mJ (off) under specified test conditions. The device is housed in a TO-264AA package, facilitating through-hole mounting. Applications for this component include industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 120A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 60ns/200ns |
| Switching Energy | 2.4mJ (on), 5.5mJ (off) |
| Test Condition | 480V, 100A, 2.4Ohm, 15V |
| Gate Charge | 350 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 660 W |
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