IXGK120N120A3
IGBT PT 1200V 240A TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGK120N120A3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This PT-type IGBT features a collector-emitter voltage of 1200V and a continuous collector current of 240A, with a pulsed capability of 600A. With a maximum power dissipation of 830W and a low on-state voltage of 2.2V at 15V gate drive and 100A, it offers efficient power handling. The device boasts a gate charge of 420 nC and switching times of 40ns (turn-on) and 490ns (turn-off) at 25°C. Its TO-264 package with through-hole mounting ensures robust thermal management for operation across a wide temperature range of -55°C to 150°C. This component is suitable for use in industrial motor drives, high-power switching power supplies, and electric vehicle power trains.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 40ns/490ns |
| Switching Energy | 10mJ (on), 33mJ (off) |
| Test Condition | 960V, 100A, 1Ohm, 15V |
| Gate Charge | 420 nC |
| Current - Collector (Ic) (Max) | 240 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 830 W |
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