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IXGK100N170

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IXGK100N170

IGBT PT 1000V 120A TO-264

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IGBT, part number IXGK100N170, is a high-voltage insulated gate bipolar transistor designed for demanding power applications. This PLUS264™ packaged device offers a robust 1700V collector-emitter breakdown voltage and a continuous collector current capability of 170A (600A pulsed). With a maximum power dissipation of 830W and a low on-state voltage of 3V at 15V gate-emitter voltage and 100A collector current, the IXGK100N170 ensures efficient power handling. Typical switching times are 35ns turn-on and 285ns turn-off at 25°C under test conditions of 850V, 100A, 1 Ohm, and 15V. The component features standard input and a through-hole mounting type, specified in a TO-264-3, TO-264AA package. Operating across a wide temperature range of -55°C to 150°C, this IGBT is suitable for industrial motor drives, uninterruptible power supplies (UPS), and high-power switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3V @ 15V, 100A
Supplier Device PackagePLUS264™
IGBT Type-
Td (on/off) @ 25°C35ns/285ns
Switching Energy-
Test Condition850V, 100A, 1Ohm, 15V
Gate Charge425 nC
Grade-
Current - Collector (Ic) (Max)170 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)600 A
Power - Max830 W
Qualification-

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