IXGJ40N60C2D1
IGBT 600V 75A 300W TO268Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IXGJ40N60C2D1 is a Power Transistor (PT) Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This device features a collector-emitter voltage (Vce) rating of 600V and a continuous collector current (Ic) capability of 75A, with a pulsed current (Icm) of 200A. The IXGJ40N60C2D1 offers a low collector-emitter saturation voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 30A collector current, along with a maximum power dissipation of 300W. Its fast switching characteristics are evident in the typical turn-on delay (Td(on)) of 18ns and turn-off delay (Td(off)) of 90ns at 25°C. The component exhibits a gate charge of 95 nC and a reverse recovery time (trr) of 25 ns. Operating across a temperature range of -55°C to 150°C, this IGBT is housed in a TO-268 package. Applications include power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| Supplier Device Package | TO-268 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/90ns |
| Switching Energy | 200µJ (off) |
| Test Condition | 400V, 30A, 3Ohm, 15V |
| Gate Charge | 95 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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