IXGH72N60C3
IGBT 600V 75A 540W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ series IXGH72N60C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT IGBT boasts a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 360A. It offers a low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 50A collector current. Key switching characteristics include a gate charge of 174 nC and switching energies of 1.03mJ (on) and 480µJ (off) under specific test conditions (480V, 50A, 2 Ohm, 15V). With a maximum power dissipation of 540W and an operating temperature range of -55°C to 150°C, this device is suitable for industrial motor drives, welding equipment, and power supply applications. The IXGH72N60C3 is supplied in a TO-247AD package for through-hole mounting.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 27ns/77ns |
| Switching Energy | 1.03mJ (on), 480µJ (off) |
| Test Condition | 480V, 50A, 2Ohm, 15V |
| Gate Charge | 174 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 360 A |
| Power - Max | 540 W |
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