IXGH72N60B3
IGBT 600V 75A 540W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™ IXGH72N60B3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of up to 400A. The low on-state voltage of 1.8V at 15V gate-emitter and 60A collector current, coupled with efficient switching characteristics (1.38mJ on, 1.05mJ off at 480V, 50A), makes it suitable for high-efficiency power conversion. With a maximum power dissipation of 540W and an operating temperature range of -55°C to 150°C, this PT-type IGBT is robust for industrial motor drives, uninterruptible power supplies (UPS), and welding equipment. The IXGH72N60B3 is supplied in a TO-247AD package for through-hole mounting.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 60A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 31ns/150ns |
| Switching Energy | 1.38mJ (on), 1.05mJ (off) |
| Test Condition | 480V, 50A, 3Ohm, 15V |
| Gate Charge | 230 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 540 W |
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