IXGH72N60A3
IGBT 600V 75A 540W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH72N60A3 is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This PT IGBT features a maximum collector power dissipation of 540W and a continuous collector current of 75A, with a pulsed capability of 400A. The Vce(on) is specified at 1.35V at 15V gate-emitter voltage and 60A collector current. Key switching characteristics include a gate charge of 230 nC and switching energy figures of 1.38mJ (on) and 3.5mJ (off) at 480V, 50A, 3 Ohm, 15V. The device operates across a temperature range of -55°C to 150°C (TJ). Packaged in a TO-247AD for through-hole mounting, this component is suitable for applications in industrial power conversion and motor control.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 60A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 31ns/320ns |
| Switching Energy | 1.38mJ (on), 3.5mJ (off) |
| Test Condition | 480V, 50A, 3Ohm, 15V |
| Gate Charge | 230 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 540 W |
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