IXGH60N60C3D1
IGBT 600V 75A 380W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGH60N60C3D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT-type IGBT features a robust 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 300A (Icm). With a maximum power dissipation of 380W, it is suitable for use in power supplies, motor control, and industrial automation. Key electrical characteristics include a low on-state voltage (Vce(on)) of 2.5V at 15V gate drive and 40A collector current, and a gate charge of 115nC. Switching performance is demonstrated by switching energies of 800µJ (on) and 450µJ (off) under test conditions of 480V, 40A, 3 Ohm, and 15V gate drive, with typical turn-on delay (Td(on)) of 21ns and turn-off delay (Td(off)) of 70ns. The device operates across a wide temperature range of -55°C to 150°C (TJ) and is presented in a TO-247AD package for through-hole mounting.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 21ns/70ns |
| Switching Energy | 800µJ (on), 450µJ (off) |
| Test Condition | 480V, 40A, 3Ohm, 15V |
| Gate Charge | 115 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 380 W |
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