IXGH60N60B2
IGBT 600V 75A 500W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IGBT, part number IXGH60N60B2, is a Power Transistor IGBT with a 600V collector-emitter breakdown voltage and a continuous collector current of 75A. This device features a maximum power dissipation of 500W and a pulsed collector current capability of 300A. The Vce(on) is specified at 1.8V maximum at 15V gate-emitter voltage and 50A collector current, under test conditions of 400V, 50A, 3.3 Ohm, 15V. Switching characteristics include a turn-on delay of 28ns and turn-off delay of 160ns at 25°C, with an off-state switching energy of 1mJ. The gate charge is 170 nC. Designed for through-hole mounting, it utilizes the TO-247-3 package. Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly employed in power switching applications across industrial and high-power motor control sectors.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 28ns/160ns |
| Switching Energy | 1mJ (off) |
| Test Condition | 400V, 50A, 3.3Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 500 W |
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