IXGH60N60
IGBT 600V 75A 300W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH60N60 is a high-performance Planar Trench Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 75A, with a pulsed current rating of 200A. The low on-state voltage of 1.7V at 15V gate-emitter voltage and 60A collector current, combined with a typical gate charge of 130 nC, ensures efficient switching performance. With a maximum power dissipation of 300W and a switching energy of 8mJ (off) under specified test conditions (480V, 60A, 2.7 Ohm, 15V), this IGBT is suitable for high-power motor control, power supplies, and welding equipment. The TO-247AD package facilitates through-hole mounting and operation across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 60A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 50ns/300ns |
| Switching Energy | 8mJ (off) |
| Test Condition | 480V, 60A, 2.7Ohm, 15V |
| Gate Charge | 130 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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