IXGH60N30C3
IGBT 300V 75A 300W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGH60N30C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a collector-emitter voltage (Vce) breakdown of 300V and a continuous collector current (Ic) rating of 75A, with a pulsed capability of 420A. The low Vce(on) of 1.8V at 15V gate-emitter voltage and 60A collector current, coupled with switching energies of 150µJ (turn-on) and 300µJ (turn-off) at 200V, 30A, minimizes conduction and switching losses. With a gate charge of 101 nC and a maximum power dissipation of 300W, it is suitable for high-power switching applications. The device operates across a wide temperature range of -55°C to 150°C. Packaged in a TO-247AD, this through-hole component is utilized in power conversion systems, industrial motor drives, and renewable energy inverters.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 60A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 23ns/108ns |
| Switching Energy | 150µJ (on), 300µJ (off) |
| Test Condition | 200V, 30A, 5Ohm, 15V |
| Gate Charge | 101 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 420 A |
| Power - Max | 300 W |
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