IXGH56N60A3
IGBT 600V 150A 330W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGH56N60A3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This PT IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 150A, with a pulsed capability of 370A. The component dissipates up to 330W and exhibits a low on-state voltage of 1.35V at 15V gate-emitter voltage and 44A collector current. Key switching characteristics include a gate charge of 140 nC and switching energies of 1mJ (on) and 3.75mJ (off) under test conditions of 480V, 44A, 5 Ohm, and 15V. Operating across a temperature range of -55°C to 150°C (TJ), this IGBT is housed in a TO-247AD package, suitable for through-hole mounting. This device finds application in industries such as industrial automation, motor control, and power supplies.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 44A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 26ns/310ns |
| Switching Energy | 1mJ (on), 3.75mJ (off) |
| Test Condition | 480V, 44A, 5Ohm, 15V |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 370 A |
| Power - Max | 330 W |
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