IXGH50N90B2D1
IGBT PT 900V 75A TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH50N90B2D1 is a HiPerFAST™ series insulated gate bipolar transistor (IGBT) designed for high-speed switching applications. This PT IGBT features a collector-emitter voltage (Vce) breakdown of 900V and a continuous collector current (Ic) capability of 75A, with a pulsed capability (Icm) of 200A. The device exhibits a low on-state voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 50A collector current. Key switching parameters include a gate charge of 135 nC and a switching energy (Eoff) of 4.7 mJ under the specified test conditions (720V, 50A, 5 Ohm, 15V). The IXGH50N90B2D1 is packaged in a TO-247AD (TO-247-3) through-hole configuration, suitable for power dissipation up to 400W. This component is utilized in industrial applications demanding efficient power conversion, such as motor drives and power supplies. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFAST™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 20ns/350ns |
| Switching Energy | 4.7mJ (off) |
| Test Condition | 720V, 50A, 5Ohm, 15V |
| Gate Charge | 135 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 400 W |
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