IXGH50N90B2
IGBT 900V 75A 400W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT IXGH50N90B2 is a Power Transistor (PT) IGBT with a collector-emitter breakdown voltage of 900V. This device features a continuous collector current (Ic) rating of 75A, with a pulsed collector current (Icm) of 200A. The maximum power dissipation is 400W. The on-state voltage (Vce(on)) is a maximum of 2.7V at 15V gate-emitter voltage and 50A collector current. Switching characteristics include a typical turn-on delay (Td(on)) of 20ns and turn-off delay (Td(off)) of 350ns at 25°C under test conditions of 720V and 50A. The gate charge is 135nC. This IGBT is housed in a TO-247-3 package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). Applications include high-frequency power switching in industrial and renewable energy systems.
Additional Information
Series: HiPerFAST™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 20ns/350ns |
| Switching Energy | 4.7mJ (off) |
| Test Condition | 720V, 50A, 5Ohm, 15V |
| Gate Charge | 135 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 400 W |
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