IXGH50N60A
IGBT 600V 75A 250W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT IXGH50N60A is a high-performance insulated gate bipolar transistor designed for demanding power applications. This TO-247AD package component features a 600V collector-emitter breakdown voltage and a continuous collector current of 75A, with pulsed capabilities up to 200A. The Vce(on) is specified at a maximum of 2.7V at 15V gate-source voltage and 50A collector current. The device exhibits a typical gate charge of 200 nC, contributing to its fast switching characteristics with specified turn-on and turn-off delays of 50ns and 200ns respectively at 25°C. With a maximum power dissipation of 250W and a switching energy of 4.8mJ (off), this IGBT is well-suited for use in industrial power supplies, motor control, and renewable energy systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/200ns |
| Switching Energy | 4.8mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 250 W |
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