IXGH48N60C3C1
IGBT 600V 75A 300W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™ IGBT IXGH48N60C3C1 is a high-performance Insulated Gate Bipolar Transistor designed for demanding power applications. This PT IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 250A. The device offers a maximum power dissipation of 300W and a low on-state voltage of 2.5V at 15V gate drive and 30A collector current. Switching characteristics include turn-on and turn-off delays of 19ns and 60ns respectively, with corresponding switching energies of 330µJ (on) and 230µJ (off) at the specified test conditions. The IXGH48N60C3C1 is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 19ns/60ns |
| Switching Energy | 330µJ (on), 230µJ (off) |
| Test Condition | 400V, 30A, 3Ohm, 15V |
| Gate Charge | 77 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 250 A |
| Power - Max | 300 W |
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