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IXGH48N60C3C1

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IXGH48N60C3C1

IGBT 600V 75A 300W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS GenX3™ IGBT IXGH48N60C3C1 is a high-performance Insulated Gate Bipolar Transistor designed for demanding power applications. This PT IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 250A. The device offers a maximum power dissipation of 300W and a low on-state voltage of 2.5V at 15V gate drive and 30A collector current. Switching characteristics include turn-on and turn-off delays of 19ns and 60ns respectively, with corresponding switching energies of 330µJ (on) and 230µJ (off) at the specified test conditions. The IXGH48N60C3C1 is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C19ns/60ns
Switching Energy330µJ (on), 230µJ (off)
Test Condition400V, 30A, 3Ohm, 15V
Gate Charge77 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)250 A
Power - Max300 W

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