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IXGH48N60C3

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IXGH48N60C3

IGBT 600V 75A 300W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS GenX3™ IGBT IXGH48N60C3 is a high-performance insulated gate bipolar transistor designed for demanding power applications. This PT IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 250A. It offers a low collector-emitter saturation voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 30A collector current, contributing to reduced power dissipation. The device boasts a maximum power dissipation of 300W and exhibits fast switching characteristics with turn-on delay (Td(on)) of 19ns and turn-off delay (Td(off)) of 60ns at 25°C (400V, 30A). Switching energy is rated at 410µJ (on) and 230µJ (off) under specified test conditions. The IXGH48N60C3 is housed in a TO-247AD package, suitable for through-hole mounting. Its robust design and electrical specifications make it ideal for use in industrial motor drives, power supplies, and welding equipment.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C19ns/60ns
Switching Energy410µJ (on), 230µJ (off)
Test Condition400V, 30A, 3Ohm, 15V
Gate Charge77 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)250 A
Power - Max300 W

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