IXGH48N60B3D1
IGBT 600V 300W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH48N60B3D1 is a high-performance GenX3™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT type IGBT features a robust 600V collector-emitter breakdown voltage and a continuous collector current capability of 32A at a Vge of 15V, with a pulsed collector current (Icm) of 280A. The device dissipates up to 300W of power and has a low on-state voltage (Vce(on)) of 1.8V at the specified test conditions. Switching characteristics include a typical gate charge of 115 nC, with switching energies of 840µJ (on) and 660µJ (off), and turn-on/off delays of 22ns and 130ns respectively at 25°C. The IXGH48N60B3D1 is housed in a TO-247-3 package for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. This component is commonly found in industrial motor drives, power supplies, and electric vehicle charging systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 32A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 22ns/130ns |
| Switching Energy | 840µJ (on), 660µJ (off) |
| Test Condition | 480V, 30A, 5Ohm, 15V |
| Gate Charge | 115 nC |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 280 A |
| Power - Max | 300 W |
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