IXGH40N60C2D1
IGBT 600V 75A 300W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT IXGH40N60C2D1 is a high-speed punch-through Insulated Gate Bipolar Transistor designed for demanding power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 200A. The IXGH40N60C2D1 offers a Vce(on) of 2.7V at 15V gate-emitter voltage and 30A, with low switching energy of 200µJ (off) under specified test conditions. Its fast switching characteristics are further evidenced by typical turn-on delay of 18ns and turn-off delay of 90ns. Housed in a TO-247AD package, this IGBT is suitable for through-hole mounting and operates across a wide temperature range from -55°C to 150°C. It finds application in power factor correction, induction heating, and motor drives.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/90ns |
| Switching Energy | 200µJ (off) |
| Test Condition | 400V, 30A, 3Ohm, 15V |
| Gate Charge | 95 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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