IXGH40N60C2
IGBT 600V 75A 300W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IGBT IXGH40N60C2 is a 600V, 75A insulated gate bipolar transistor designed for high-performance switching applications. This PT IGBT features a low saturation voltage of 2.7V at 15V gate-emitter voltage and 30A collector current, with a maximum collector current of 75A and a pulsed collector current of 200A. The device exhibits a gate charge of 95 nC and switching characteristics with turn-on delay of 18ns and turn-off delay of 90ns at 25°C, under test conditions of 400V, 30A, 3 Ohm, and 15V. Its maximum power dissipation is 300W, and it operates within an extended temperature range of -55°C to 150°C. Packaged in a TO-247AD through-hole configuration, this component is suitable for use in power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/90ns |
| Switching Energy | 200µJ (off) |
| Test Condition | 400V, 30A, 3Ohm, 15V |
| Gate Charge | 95 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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