IXGH40N60B2
IGBT 600V 75A 300W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IGBT, part number IXGH40N60B2, is a Power Transistor (PT) with a 600V collector-emitter breakdown voltage. This device features a maximum collector current of 75A, with a pulsed capability of 200A. The IGBT exhibits a low on-state voltage of 1.7V at 15V gate-emitter voltage and 30A collector current. Switching characteristics include an 18ns turn-on delay and a 130ns turn-off delay, with a switching energy of 400µJ (off) under test conditions of 400V, 30A, 3.3O, and 15V. The device is housed in a TO-247AD package, suitable for through-hole mounting, and supports an operating temperature range of -55°C to 150°C. Its high power dissipation capability of 300W makes it suitable for applications in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/130ns |
| Switching Energy | 400µJ (off) |
| Test Condition | 400V, 30A, 3.3Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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