IXGH40N60
IGBT 600V 75A 250W TO247ADManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGH40N60 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for robust power switching applications. This component offers a collector-emitter voltage of 600V and a continuous collector current capability of 75A, with a pulsed current rating of 150A. Its maximum power dissipation is 250W. Featuring a standard input type, the IXGH40N60 has a gate charge of 200 nC and a low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 40A collector current. Switching characteristics include an on-delay of 100ns and an off-delay of 600ns at 25°C, with a switching energy of 3mJ (off) under test conditions of 480V, 40A, 22 Ohm, and 15V. The device is housed in a TO-247AD package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This IGBT is commonly utilized in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/600ns |
| Switching Energy | 3mJ (off) |
| Test Condition | 480V, 40A, 22Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 250 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXYK140N90C3
IGBT 900V 310A 1630W TO264
