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IXGH40N120C3D1

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IXGH40N120C3D1

IGBT 1200V 75A 380W TO247

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS GenX3™ IXGH40N120C3D1 is a Power Transistor (PT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 75 A, with a pulsed collector current capability of 180 A. The device offers a maximum power dissipation of 380 W and a low on-state voltage of 4.4 V at 15 V gate-emitter voltage and 30 A collector current. Key switching characteristics include a gate charge of 142 nC, turn-on delay (Td(on)) of 17 ns, and turn-off delay (Td(off)) of 130 ns, both specified at 25°C under test conditions of 600 V, 30 A, 3 Ohm, 15 V. Switching energy is rated at 1.8 mJ for turn-on and 550 µJ for turn-off. Operating temperature spans from -55°C to 150°C (TJ). The IXGH40N120C3D1 is housed in a TO-247-3 package with through-hole mounting. This IGBT is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)100 ns
Vce(on) (Max) @ Vge, Ic4.4V @ 15V, 30A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C17ns/130ns
Switching Energy1.8mJ (on), 550µJ (off)
Test Condition600V, 30A, 3Ohm, 15V
Gate Charge142 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)180 A
Power - Max380 W

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