IXGH40N120C3D1
IGBT 1200V 75A 380W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGH40N120C3D1 is a Power Transistor (PT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 75 A, with a pulsed collector current capability of 180 A. The device offers a maximum power dissipation of 380 W and a low on-state voltage of 4.4 V at 15 V gate-emitter voltage and 30 A collector current. Key switching characteristics include a gate charge of 142 nC, turn-on delay (Td(on)) of 17 ns, and turn-off delay (Td(off)) of 130 ns, both specified at 25°C under test conditions of 600 V, 30 A, 3 Ohm, 15 V. Switching energy is rated at 1.8 mJ for turn-on and 550 µJ for turn-off. Operating temperature spans from -55°C to 150°C (TJ). The IXGH40N120C3D1 is housed in a TO-247-3 package with through-hole mounting. This IGBT is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 4.4V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 17ns/130ns |
| Switching Energy | 1.8mJ (on), 550µJ (off) |
| Test Condition | 600V, 30A, 3Ohm, 15V |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 380 W |