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IXGH40N120C3

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IXGH40N120C3

IGBT 1200V 75A 380W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS GenX3™ IXGH40N120C3 is a high-performance insulated gate bipolar transistor (IGBT) designed for demanding applications. This PT IGBT features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 75A, with a pulsed current rating of 200A. It offers a maximum power dissipation of 380W and a low on-state voltage of 4.4V at 15V gate-emitter voltage and 30A collector current, tested under 600V and 30A conditions. With a gate charge of 142 nC, the IXGH40N120C3 exhibits efficient switching characteristics, with typical on-time of 17ns and off-time of 130ns at 25°C. Switching energy is specified at 1.8mJ (on) and 550µJ (off). The component is housed in a TO-247-3 package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C. This device is commonly utilized in motor drives, industrial power supplies, and renewable energy systems.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic4.4V @ 15V, 30A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C17ns/130ns
Switching Energy1.8mJ (on), 550µJ (off)
Test Condition600V, 30A, 3Ohm, 15V
Gate Charge142 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)200 A
Power - Max380 W

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