IXGH40N120C3
IGBT 1200V 75A 380W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGH40N120C3 is a high-performance insulated gate bipolar transistor (IGBT) designed for demanding applications. This PT IGBT features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 75A, with a pulsed current rating of 200A. It offers a maximum power dissipation of 380W and a low on-state voltage of 4.4V at 15V gate-emitter voltage and 30A collector current, tested under 600V and 30A conditions.
With a gate charge of 142 nC, the IXGH40N120C3 exhibits efficient switching characteristics, with typical on-time of 17ns and off-time of 130ns at 25°C. Switching energy is specified at 1.8mJ (on) and 550µJ (off). The component is housed in a TO-247-3 package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C. This device is commonly utilized in motor drives, industrial power supplies, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4.4V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 17ns/130ns |
| Switching Energy | 1.8mJ (on), 550µJ (off) |
| Test Condition | 600V, 30A, 3Ohm, 15V |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 380 W |
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