IXGH40N120B2D1
IGBT 1200V 75A 380W TO247Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGH40N120B2D1 is a 1200V, 75A N-channel Insulated Gate Bipolar Transistor (IGBT) with a 380W power dissipation. This PT IGBT features a robust TO-247AD package for through-hole mounting. Key electrical specifications include a collector current (Ic) of 75A, a pulsed collector current (Icm) of 200A, and a low on-state voltage (Vce(on)) of 3.5V at 15V gate-emitter voltage and 40A collector current. The device exhibits a gate charge of 138 nC and switching characteristics with typical turn-on delay (Td(on)) of 21ns and turn-off delay (Td(off)) of 290ns at 25°C, under test conditions of 960V, 40A, 2 Ohm, and 15V. Operating temperature range is from -55°C to 150°C (TJ). This component is suitable for high-voltage switching applications in industries such as industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 40A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 21ns/290ns |
| Switching Energy | 4.5mJ (on), 3mJ (off) |
| Test Condition | 960V, 40A, 2Ohm, 15V |
| Gate Charge | 138 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 380 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXGA48N60A3-TRL
IXGA48N60A3 TRL
