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IXGH40N120B2D1

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IXGH40N120B2D1

IGBT 1200V 75A 380W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH40N120B2D1 is a 1200V, 75A N-channel Insulated Gate Bipolar Transistor (IGBT) with a 380W power dissipation. This PT IGBT features a robust TO-247AD package for through-hole mounting. Key electrical specifications include a collector current (Ic) of 75A, a pulsed collector current (Icm) of 200A, and a low on-state voltage (Vce(on)) of 3.5V at 15V gate-emitter voltage and 40A collector current. The device exhibits a gate charge of 138 nC and switching characteristics with typical turn-on delay (Td(on)) of 21ns and turn-off delay (Td(off)) of 290ns at 25°C, under test conditions of 960V, 40A, 2 Ohm, and 15V. Operating temperature range is from -55°C to 150°C (TJ). This component is suitable for high-voltage switching applications in industries such as industrial motor drives and power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)100 ns
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 40A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C21ns/290ns
Switching Energy4.5mJ (on), 3mJ (off)
Test Condition960V, 40A, 2Ohm, 15V
Gate Charge138 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)200 A
Power - Max380 W

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