IXGH40N120A2
IGBT 1200V 75A 360W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXGH40N120A2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This PT IGBT features a maximum collector-emitter voltage of 1200 V and a continuous collector current capability of 75 A, with a pulsed current rating of 160 A. The device exhibits a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 40A collector current. With a gate charge of 136 nC, the IXGH40N120A2 offers efficient switching characteristics, demonstrated by typical turn-on delay (td(on)) of 22ns and turn-off delay (td(off)) of 420ns at 25°C, under test conditions of 960V, 40A, 2 Ohms, and 15V. The component dissipates a maximum power of 360 W and operates within an extended temperature range of -55°C to 150°C. Packaged in a TO-247AD through-hole configuration, this IGBT is suitable for high-power motor control, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 22ns/420ns |
| Switching Energy | 15mJ (off) |
| Test Condition | 960V, 40A, 2Ohm, 15V |
| Gate Charge | 136 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 360 W |
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