IXGH36N60B3D1
IGBT 600V 250W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™ IGBT IXGH36N60B3D1 is a high-performance power semiconductor featuring a 600V collector-emitter breakdown voltage and 250W maximum power dissipation. This PT IGBT, housed in a TO-247AD package, offers a continuous collector current of 30A (under specified test conditions) and a pulsed collector current of 200A. Key performance parameters include a low on-state voltage of 1.8V at 15V gate drive and 30A collector current, with typical turn-on delay of 19ns and turn-off delay of 125ns at 25°C. The device exhibits a gate charge of 80nC and switching energy of 540µJ (on) and 800µJ (off). Its robust design supports an operating temperature range of -55°C to 150°C. Applications include industrial motor drives, welding equipment, and uninterruptible power supplies (UPS).
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 19ns/125ns |
| Switching Energy | 540µJ (on), 800µJ (off) |
| Test Condition | 400V, 30A, 5Ohm, 15V |
| Gate Charge | 80 nC |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 250 W |
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