IXGH36N60A3
IGBT 600V 220W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH36N60A3 is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 30A at 25°C, with a pulsed collector current capability of up to 200A. The typical on-state voltage drop (Vce(on)) is 1.4V at 15V gate-emitter voltage and 30A collector current, with a low gate charge of 80 nC.
This IGBT offers a maximum power dissipation of 220W and exhibits switching characteristics with typical turn-on delay (td(on)) of 18ns and turn-off delay (td(off)) of 330ns at 25°C. Switching energy is specified at 740µJ (on) and 3mJ (off) under test conditions of 400V, 30A, 5 Ohm, and 15V. The IXGH36N60A3 is housed in a TO-247AD package, suitable for through-hole mounting and operating across a temperature range of -55°C to 150°C. Its robust performance makes it suitable for industrial motor drives, welding equipment, and power supply applications.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/330ns |
| Switching Energy | 740µJ (on), 3mJ (off) |
| Test Condition | 400V, 30A, 5Ohm, 15V |
| Gate Charge | 80 nC |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 220 W |
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