IXGH35N120C
IGBT 1200V 70A 300W TO247ADManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGH35N120C is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the Lightspeed™ series. This device offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 70 A, with a pulsed capability of 140 A. Designed for demanding applications, it dissipates a maximum power of 300 W and features a low on-state voltage (Vce(on)) of 4 V at 15 V gate-source voltage and 35 A collector current.
Key parameters include a gate charge of 170 nC and switching times of 50 ns turn-on and 150 ns turn-off at 25°C, with a switching energy of 3 mJ (off) under test conditions of 960 V, 35 A, 5 Ohm, and 15 V. The IXGH35N120C is housed in a TO-247AD package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power conversion systems, motor drives, and industrial power supplies.
Additional Information
Series: Lightspeed™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 35A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/150ns |
| Switching Energy | 3mJ (off) |
| Test Condition | 960V, 35A, 5Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 300 W |
Request a Quote
Clients Also Buy
IXGA15N100C
IGBT 1000V 30A 150W TO263AA
IXGP15N100C
IGBT 1000V 30A 150W TO220AB
IXGP15N120C
IGBT 1200V 30A 200W TO220AB
