IXGH35N120B
IGBT 1200V 70A 300W TO247Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS HiPerFAST™ IGBT, part number IXGH35N120B, is a high-performance Insulated Gate Bipolar Transistor designed for demanding applications. This component features a collector-emitter voltage of 1200V and a continuous collector current rating of 70A, with a pulsed capability of 140A. It offers a low on-state voltage of 3.3V at 15V gate-emitter voltage and 35A collector current, and a maximum power dissipation of 300W. The device is built with a Positive Temperature Coefficient (PT) IGBT structure, ensuring robust operation. Gate charge is specified at 170 nC. The IXGH35N120B is packaged in a TO-247AD through-hole configuration, suitable for mounting in power systems. Typical switching characteristics include a turn-on delay of 50ns and a turn-off delay of 180ns at 25°C, under test conditions of 960V, 35A, 5 Ohm, and 15V. This component is utilized in power conversion, motor control, and industrial power supply sectors.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 35A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 50ns/180ns |
| Switching Energy | 3.8mJ (off) |
| Test Condition | 960V, 35A, 5Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 300 W |
Request a Quote
Clients Also Buy
IXGH50N90B2D1
IGBT PT 900V 75A TO247AD
IXGH50N90B2
IGBT 900V 75A 400W TO247
IXGH24N60A
IGBT 600V 48A 150W TO247AD
