IXGH32N60CD1
IGBT 600V 60A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™, Lightspeed™ series IXGH32N60CD1 is a 600V, 60A insulated gate bipolar transistor (IGBT) with a maximum power dissipation of 200W. This TO-247AD packaged component features a collector current (Ic) of 60A and a pulsed collector current (Icm) of 120A. The on-state voltage drop (Vce(on)) is 2.5V at 15V gate-emitter voltage and 32A collector current. Key parameters include a gate charge of 110 nC and a reverse recovery time (trr) of 25 ns, with typical turn-on delay (Td(on)) of 25ns and turn-off delay (Td(off)) of 85ns at 25°C, tested under 480V, 32A, 4.7 Ohm, and 15V conditions. The device operates across a temperature range of -55°C to 150°C. This IGBT is suitable for applications in high-frequency power switching, motor drives, and uninterruptible power supplies.
Additional Information
Series: HiPerFAST™, Lightspeed™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 32A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/85ns |
| Switching Energy | 320µJ (off) |
| Test Condition | 480V, 32A, 4.7Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 200 W |
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