IXGH32N60BD1
IGBT 600V 60A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IXGH32N60BD1 is a 600V, 60A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This TO-247AD packaged device offers a continuous collector current of 60A (120A pulsed) and a maximum power dissipation of 200W. Featuring a low on-state voltage of 2.3V at 15V gate-emitter voltage and 32A collector current, it minimizes conduction losses. The device exhibits a gate charge of 110 nC and typical turn-off delay (td(off)) of 100ns at 25°C, indicative of its fast switching characteristics. Reverse recovery time (trr) is specified at 25 ns. Operating across a wide temperature range from -55°C to 150°C, the IXGH32N60BD1 is suitable for demanding industrial sectors including power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 32A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/100ns |
| Switching Energy | 600µJ (off) |
| Test Condition | 480V, 32A, 4.7Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 200 W |
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