IXGH32N60AU1
IGBT 600V 60A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH32N60AU1 is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This through-hole component features a collector-emitter voltage (Vce) of 600V and a continuous collector current (Ic) of 60A, with a pulsed capability of 120A. Its low on-state voltage (Vce(on)) of 2.9V at 15V gate-emitter voltage and 32A collector current, coupled with a maximum power dissipation of 200W, makes it suitable for demanding power switching circuits. The device exhibits a gate charge of 125 nC and a typical switching energy of 1.8 mJ (off) under test conditions of 480V, 32A, 4.7 Ohms, and 15V. This IGBT is manufactured by IXYS and is supplied in a TO-247AD package. It finds application in industries such as industrial power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 32A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/120ns |
| Switching Energy | 1.8mJ (off) |
| Test Condition | 480V, 32A, 4.7Ohm, 15V |
| Gate Charge | 125 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 200 W |
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