IXGH32N120A3
IGBT 1200V 75A 300W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IGBT, part number IXGH32N120A3, is a high-performance insulated gate bipolar transistor designed for demanding applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 230A. The on-state voltage (Vce(on)) is a maximum of 2.35V at 15V gate-emitter voltage and 32A collector current. With a gate charge of 89 nC, it offers efficient switching characteristics. The IXGH32N120A3 is packaged in a TO-247-3 (TO-247AD) through-hole configuration, allowing for robust thermal management with a maximum power dissipation of 300W. Its operating temperature range spans from -55°C to 150°C (TJ). This IGBT is commonly utilized in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 32A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 89 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 230 A |
| Power - Max | 300 W |
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