IXGH31N60D1
IGBT 600V 60A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGH31N60D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 600V collector-emitter breakdown voltage and can handle a continuous collector current of 60A, with a pulsed capability of 80A. Optimized for efficiency, it offers a maximum power dissipation of 150W. The IXGH31N60D1 exhibits a low on-state voltage (Vce(on)) of 1.7V at 15V gate-emitter voltage and 31A collector current, with a gate charge of 80nC. Its switching characteristics include a typical turn-on delay (td(on)) of 15ns and a turn-off delay (td(off)) of 400ns at 25°C, along with a reverse recovery time (trr) of 25ns. The IGBT is housed in a TO-247AD package, suitable for through-hole mounting and operating across a wide temperature range of -55°C to 150°C. This component is frequently utilized in industrial motor drives, welding equipment, and uninterruptible power supplies (UPS).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 31A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/400ns |
| Switching Energy | 6mJ (off) |
| Test Condition | 480V, 31A, 10Ohm, 15V |
| Gate Charge | 80 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXGA48N60A3-TRL
IXGA48N60A3 TRL
