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IXGH31N60

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IXGH31N60

IGBT 600V 60A 150W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXGH31N60 is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a robust 600V collector-emitter breakdown voltage (Vce(max)) and a continuous collector current (Ic) capability of 60A, with a pulsed current rating (Icm) of 80A. The Vce(on) is rated at a maximum of 1.7V at 15V gate-source voltage and 31A collector current, validated under test conditions of 480V, 31A, 10 Ohm, and 15V. With a maximum power dissipation of 150W and a switching energy (Eoff) of 6mJ at 25°C for the specified test condition, the IXGH31N60 offers efficient operation. Its typical turn-on delay (Td(on)) is 15ns and turn-off delay (Td(off)) is 400ns. The device is housed in a TO-247AD package, facilitating through-hole mounting and suitable for industrial power supplies, motor control, and renewable energy systems. Operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 31A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C15ns/400ns
Switching Energy6mJ (off)
Test Condition480V, 31A, 10Ohm, 15V
Gate Charge80 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max150 W

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