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IXGH30N60C3D1

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IXGH30N60C3D1

IGBT 600V 60A 220W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS GenX3™ IXGH30N60C3D1 is a 600 V Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device offers a continuous collector current (Ic) of 60 A and a pulsed collector current (Icm) of 150 A. With a maximum power dissipation of 220 W and a low Vce(on) of 3V at 15V/20A, it ensures efficient operation. Key parameters include a gate charge of 38 nC and a typical switching energy of 270µJ (on) and 90µJ (off), with switching times of 16ns (on) and 42ns (off) at 25°C. The IXGH30N60C3D1 features a standard input type and is housed in a TO-247-3 package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and induction heating systems.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)25 ns
Vce(on) (Max) @ Vge, Ic3V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C16ns/42ns
Switching Energy270µJ (on), 90µJ (off)
Test Condition300V, 20A, 5Ohm, 15V
Gate Charge38 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A
Power - Max220 W

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