IXGH30N60C3C1
IGBT 600V 60A 220W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™ IGBT IXGH30N60C3C1 is a high-performance insulated gate bipolar transistor designed for demanding applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 150A. The device exhibits a low on-state voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 20A collector current, contributing to reduced conduction losses. Switching characteristics are notable with typical on and off switching energies of 120µJ and 90µJ respectively, at a test condition of 300V, 20A, 5 Ohm, 15V. The gate charge is specified at 38 nC, facilitating efficient switching. This PT IGBT type is housed in a TO-247AD package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 220W. Applications include motor drives, industrial power supplies, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 17ns/42ns |
| Switching Energy | 120µJ (on), 90µJ (off) |
| Test Condition | 300V, 20A, 5Ohm, 15V |
| Gate Charge | 38 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 220 W |
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