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IXGH30N60C2D1

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IXGH30N60C2D1

IGBT 600V 70A 190W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS HiPerFAST™ IGBT, part number IXGH30N60C2D1, is a Power Transistor (PT) IGBT with a 600V collector-emitter breakdown voltage. This component features a continuous collector current (Ic) of 70A and a pulsed collector current (Icm) of 150A. The maximum power dissipation is 190W. Exhibiting a typical gate charge of 70 nC and a VCE(on) of 2.7V at 15V VGE and 24A Ic, this device is designed for high-efficiency switching applications. Its switching energy (off) is 190µJ with typical turn-on and turn-off times of 13ns and 70ns respectively at 25°C, under test conditions of 400V, 24A, 5 Ohm, and 15V. The IXGH30N60C2D1 utilizes a TO-247-3 package for through-hole mounting and operates within a temperature range of -55°C to 150°C. This component is suitable for industrial applications requiring robust power handling and fast switching characteristics.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)25 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 24A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C13ns/70ns
Switching Energy190µJ (off)
Test Condition400V, 24A, 5Ohm, 15V
Gate Charge70 nC
Current - Collector (Ic) (Max)70 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A
Power - Max190 W

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