IXGH30N60BU1
IGBT 600V 60A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH30N60BU1 is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a robust 600V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 120A. The IGBT exhibits a low on-state voltage drop of 1.8V at 15V gate-emitter voltage and 30A collector current, alongside a maximum power dissipation of 200W.
With a typical gate charge of 110 nC and switching times of 25ns (turn-on) and 130ns (turn-off) at 25°C, this component is optimized for fast switching frequencies. The TO-247AD package facilitates through-hole mounting and operates across a wide temperature range of -55°C to 150°C. Applications for the IXGH30N60BU1 include power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/130ns |
| Switching Energy | 1mJ (off) |
| Test Condition | 480V, 30A, 4.7Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 200 W |
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