IXGH30N60B4
IGBT 600V 66A 190W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH30N60B4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This TO-247AD packaged device offers a 600V collector-emitter breakdown voltage and a continuous collector current rating of 66A, with a pulsed capability of 156A. The IXGH30N60B4 features a maximum power dissipation of 190W and a low on-state voltage (Vce(on)) of 1.7V at 24A and 15V gate drive. Typical switching characteristics include a gate charge of 77 nC and switching energies of 440µJ (turn-on) and 700µJ (turn-off) under specified test conditions. This IGBT is suitable for operation across a wide temperature range of -55°C to 150°C. Applications include power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 24A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 21ns/200ns |
| Switching Energy | 440µJ (on), 700µJ (off) |
| Test Condition | 400V, 24A, 10Ohm, 15V |
| Gate Charge | 77 nC |
| Current - Collector (Ic) (Max) | 66 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 156 A |
| Power - Max | 190 W |
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