IXGH30N60B2
IGBT 600V 70A 190W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT IXGH30N60B2 is a 600V, 70A insulated gate bipolar transistor designed for high-efficiency power switching applications. This PT IGBT features a maximum collector current of 70A and a pulsed collector current of 150A. With a low Vce(on) of 1.8V at 15V gate drive and 24A collector current, it minimizes conduction losses. The IXGH30N60B2 offers fast switching characteristics, with typical turn-on delay (Td(on)) of 13ns and turn-off delay (Td(off)) of 110ns at 25°C, and a switching energy (Eoff) of 320µJ under specified test conditions (400V, 24A, 5O, 15V). The device has a maximum power dissipation of 190W and a gate charge of 66nC. Packaged in a TO-247AD for through-hole mounting, it operates within an extended temperature range of -55°C to 150°C. Applications include industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 24A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 13ns/110ns |
| Switching Energy | 320µJ (off) |
| Test Condition | 400V, 24A, 5Ohm, 15V |
| Gate Charge | 66 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 190 W |
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