IXGH30N60B
IGBT 600V 60A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH30N60B is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) with a breakdown voltage of 600V and a continuous collector current of 60A. This component features a maximum power dissipation of 200W and a collector-emitter saturation voltage (Vce(on)) of 1.8V at 15V gate-emitter voltage and 30A collector current. The device has a specified gate charge of 125 nC and switching times of 25ns turn-on and 130ns turn-off at 25°C, with a switching energy of 1.3mJ (off). The IXGH30N60B is housed in a TO-247AD package, suitable for through-hole mounting, and operates within an ambient temperature range of -55°C to 150°C. This IGBT is commonly utilized in high-power switching applications across industries such as industrial motor control, power supplies, and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/130ns |
| Switching Energy | 1.3mJ (off) |
| Test Condition | 480V, 30A, 4.7Ohm, 15V |
| Gate Charge | 125 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 200 W |
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