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IXGH30N120B3D1

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IXGH30N120B3D1

IGBT 1200V 300W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH30N120B3D1 is a high-performance N-channel GenX3™ IGBT designed for demanding applications. This device features a 1200V collector-emitter breakdown voltage (Vce(max)) and a continuous collector current (Ic) of 30A, with a pulsed collector current (Icm) capability of 150A. The IGBT offers a low on-state voltage (Vce(on)) of 3.5V at 15V Vge and 30A Ic, contributing to reduced conduction losses. Switching performance is characterized by turn-on delay (Td(on)) of 16ns and turn-off delay (Td(off)) of 127ns at 25°C, with associated switching energies of 3.47mJ (on) and 2.16mJ (off). The IXGH30N120B3D1 utilizes a standard input type and is packaged in a TO-247AD through-hole configuration, suitable for robust thermal management. The maximum power dissipation is 300W, and it operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power conversion systems, motor drives, and industrial power supplies.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)100 ns
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 30A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C16ns/127ns
Switching Energy3.47mJ (on), 2.16mJ (off)
Test Condition960V, 30A, 5Ohm, 15V
Gate Charge87 nC
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)150 A
Power - Max300 W

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