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IXGH2N250

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IXGH2N250

IGBT 2500V 5.5A 32W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH2N250 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 2500V collector-emitter breakdown voltage, making it suitable for high-power switching and motor control systems. With a continuous collector current rating of 5.5A (13.5A pulsed) and a maximum power dissipation of 32W, the IXGH2N250 offers robust performance. The TO-247AD package facilitates efficient heat dissipation through its through-hole mounting, while the standard input type and 10.5 nC gate charge ensure straightforward integration into existing designs. Its operating temperature range of -55°C to 150°C underscores its reliability in harsh environments. This IGBT is commonly utilized in industrial power supplies, electric vehicle powertrains, and renewable energy inverters.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3.1V @ 15V, 2A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge10.5 nC
Current - Collector (Ic) (Max)5.5 A
Voltage - Collector Emitter Breakdown (Max)2500 V
Current - Collector Pulsed (Icm)13.5 A
Power - Max32 W

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